參數(shù)資料
型號(hào): PM50150K
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Module(N溝道功率MOSFET模塊)
中文描述: 硅N溝道功率場(chǎng)效應(yīng)晶體管模塊(不適用溝道功率MOSFET的模塊)
文件頁數(shù): 6/10頁
文件大小: 71K
代理商: PM50150K
PM50150K
6
0.5
0.4
0.3
0.2
0.1
0
–40
0
40
80
120
Case Temperature T (°C)
S
S
D
Static Drain to Source on State
Resistance vs. Temperature
I = 75 A
V = 10 V
GS
Pulse Test
I = 50 A
I = 150 A
100
10
1
1
10
100
Drain Current I (A)
F
Forward Transfer Admittance
vs. Drain Current
V = 10 V
Pulse Test
Ta = –25°C
25°C
75°C
1000
1000
f
1000
100
10
0.1
1
10
100
Reverse Drain Current I (A)
DR
R
Body to Drain Diode Reverse
Recovery Time
di/dt = 100A/ s, V = 0 V
Pulse Test
r
1000
300
30
10000
C
1000
100
10
0
Drain to Source Voltage V (V)
10
20
30
Typical Capacitance
vs. Drain to Source Voltage
V = 0 V
f = 1 MHz
Ciss
Coss
Crss
100000
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