參數(shù)資料
型號: PLB16030U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-437A, 3 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 71K
代理商: PLB16030U
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.3 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
65
45
15
40
3
2.6
40
+150
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
10 s; note 1
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
P
tot max
= 40 W.
handbook, halfpage
200
MCD394
50
40
20
50
100
Tmb (
o
C)
0
0
Ptot
(W)
150
Fig.3 Load power as a function of source power.
V
CC
= 28 V; f = 1.6 GHz.
handbook, halfpage
PL
(W)
0
2
4
8
30
10
0
20
MCD395
6
PSOURCE (W)
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