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| 型號(hào)： | PLB16030U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-437A, 3 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | PLB16030U |
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
FEATURES
Input and output matching cell
allows an easier design of circuits
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common base class B power
amplifiers at 1.6 GHz. Also suitable
for operation in the frequency range
1.4 to 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package with base connected
to flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common base class B
narrowband amplifier.
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
; Z
L
(
)
see Figs 5
and 6
Class B (CW)
1.6
28
>30
>7
>45
PINNING - SOT437A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
1
2
3
Top view
e
c
b
MAM112
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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