IDD Supply Current
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� PIC16F870-I/SS
寤犲晢锛� Microchip Technology
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PIC16F870/871
DS30569B-page 120
2003 Microchip Technology Inc.
IDD
Supply Current(2,5)
D010
D010A
PIC16LF870/871
鈥�
0.6
20
2.0
35
mA
A
XT, RC osc configuration
FOSC = 4 MHz, VDD = 3.0V (Note 4)
LP osc configuration
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D010
D013
PIC16F870/871
鈥�
1.6
7
4
15
mA
XT, RC osc configuration
FOSC = 4 MHz, VDD = 5.5V (Note 4)
HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, -40
掳C to +85掳C
HS osc configuration
FOSC = 10 MHz, VDD = 5.5V, -40
掳C to +125掳C
D015*
IBOR Brown-out Reset
Current(6)
鈥�85
200
A BOR enabled, VDD = 5.0V
IPD
Power-down Current(3,5)
D020
D021
D021A
PIC16LF870/871
鈥�
7.5
0.8
0.9
30
4.5
5
A
VDD = 3.0V, WDT enabled, -40
掳C to +85掳C
VDD = 3.0V, WDT disabled, 0
掳C to +70掳C
VDD = 3.0V, WDT disabled, -40
掳C to +85掳C
D020
D20A
D021
D021A
D21B
PIC16F870/871
鈥�
10.5
1.5
42
60
16
19
30
A
VDD = 4.0V, WDT enabled, -40
掳C to +85掳C
VDD = 4.0V, WDT enabled, -40
掳C to +125掳C
VDD = 4.0V, WDT disabled, -0
掳C to +70掳C
VDD = 4.0V, WDT disabled, -40
掳C to +85掳C
VDD = 4.0V, WDT disabled, -40
掳C to +125掳C
D023*
IBOR Brown-out Reset
Current(6)
鈥�85
200
A BOR enabled, VDD = 5.0V
14.1
DC Characteristics: PIC16F870/871 (Industrial, Extended)
PIC16LF870/871 (Commercial, Industrial) (Continued)
PIC16LF870/871
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40掳C
鈮� TA 鈮� +85掳C for Industrial
0掳C
鈮� TA 鈮� +70掳C for Commercial
PIC16F870/871
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40掳C
鈮� TA 鈮� +85掳C for Industrial
-40掳C
鈮� TA 鈮� +125掳C for Extended
Param
No.
Sym
Characteristic
Min
Typ Max Units
Conditions
*
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25掳C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
This is the limit to which VDD can be lowered without losing RAM data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature also have
an impact on the current consumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3:
The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4:
For RC osc configuration, current through REXT is not included. The current through the resistor can be
estimated by the formula Ir = VDD/2REXT (mA) with REXT in k
.
5:
Timer1 oscillator (when enabled) adds approximately 20
A to the specification. This value is from
characterization and is for design guidance only. This is not tested.
6:
The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7:
When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.
鐩搁棞(gu膩n)PDF璩囨枡
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PIC16F870T-E/SO 鍔熻兘鎻忚堪:8浣嶅井鎺у埗鍣� -MCU 3.5KB 128 RAM 22 I/O RoHS:鍚� 鍒堕€犲晢:Silicon Labs 鏍稿績:8051 铏曠悊鍣ㄧ郴鍒�:C8051F39x 鏁�(sh霉)鎿�(j霉)绺界窔瀵害:8 bit 鏈€澶ф檪(sh铆)閻橀牷鐜�:50 MHz 绋嬪簭瀛樺劜(ch菙)鍣ㄥぇ灏�:16 KB 鏁�(sh霉)鎿�(j霉) RAM 澶у皬:1 KB 鐗囦笂 ADC:Yes 宸ヤ綔闆绘簮闆诲:1.8 V to 3.6 V 宸ヤ綔婧害鑼冨湇:- 40 C to + 105 C 灏佽 / 绠遍珨:QFN-20 瀹夎棰�(f膿ng)鏍�:SMD/SMT
PIC16F870T-E/SS 鍔熻兘鎻忚堪:8浣嶅井鎺у埗鍣� -MCU 3.5KB 128 RAM 22 I/O RoHS:鍚� 鍒堕€犲晢:Silicon Labs 鏍稿績:8051 铏曠悊鍣ㄧ郴鍒�:C8051F39x 鏁�(sh霉)鎿�(j霉)绺界窔瀵害:8 bit 鏈€澶ф檪(sh铆)閻橀牷鐜�:50 MHz 绋嬪簭瀛樺劜(ch菙)鍣ㄥぇ灏�:16 KB 鏁�(sh霉)鎿�(j霉) RAM 澶у皬:1 KB 鐗囦笂 ADC:Yes 宸ヤ綔闆绘簮闆诲:1.8 V to 3.6 V 宸ヤ綔婧害鑼冨湇:- 40 C to + 105 C 灏佽 / 绠遍珨:QFN-20 瀹夎棰�(f膿ng)鏍�:SMD/SMT
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