參數(shù)資料
型號(hào): PIC16F72-I/ML
廠商: Microchip Technology
文件頁數(shù): 14/136頁
文件大?。?/td> 0K
描述: IC PIC MCU FLASH 2KX14 28-QFN
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
標(biāo)準(zhǔn)包裝: 61
系列: PIC® 16F
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
連通性: I²C,SPI
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 22
程序存儲(chǔ)器容量: 3.5KB(2K x 14)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 5x8b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 28-VQFN 裸露焊盤
包裝: 管件
產(chǎn)品目錄頁面: 639 (CN2011-ZH PDF)
配用: AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
其它名稱: PIC16F72-I/MLR
PIC16F72-I/MLR-ND
110
2535J–AVR–08/10
ATtiny13
6. Wait until Vcc actually reaches 4.5 - 5.5V before giving any serialinstructions on
SDI/SII.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
17.7.2
High-Voltage Serial Programming Instruction set
The instruction set is described in Table 17-13.
Table 17-12. High-voltage Reset Characteristics
Supply Voltage
RESET Pin High-voltage Threshold
Minimum High-voltage Period for
Latching Prog_enable
VCC
VHVRST
tHVRST
4.5V
12V
100 ns
5.5V
12
100 ns
Table 17-13. High-Voltage Serial Programming Instruction Set for ATtiny13
Instruction
Instruction Format
Operation Remarks
Instr.1/5
Instr.2/6
Instr.3
Instr.4
Chip Erase
SDI
SII
SDO
0_1000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Wait after Instr.3 until SDO goes
high for the Chip Erase cycle to
finish.
Load “Write
Flash”
Command
SDI
SII
SDO
0_0001_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter Flash Programming code.
Load Flash
Page Buffer
SDI
SII
SDO
0_ bbbb_bbbb _00
0_0000_1100_00
x_xxxx_xxxx_xx
0_eeee_eeee_00
0_0010_1100_00
x_xxxx_xxxx_xx
0_dddd_dddd_00
0_0011_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1101_00
x_xxxx_xxxx_xx
Repeat after Instr. 1 - 5 until the
entire page buffer is filled or until all
data within the page is filled. See
Note 1.
SDI
SII
SDO
0_0000_0000_00
0_0111_1100_00
x_xxxx_xxxx_xx
Instr 5.
Load Flash High
Address and
Program Page
SDI
SII
SDO
0_0000_000a_00
0_0001_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Wait after Instr 3 until SDO goes
high. Repeat Instr. 2 - 3 for each
loaded Flash Page until the entire
Flash or all data is programmed.
Repeat Instr. 1 for a new 256 byte
page. See Note 1.
Load “Read
Flash”
Command
SDI
SII
SDO
0_0000_0010_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter Flash Read mode.
Read Flash Low
and High Bytes
SDI
SII
SDO
0_bbbb_bbbb_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_000a_00
0_0001_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
q_qqqq_qqqx_xx
Repeat Instr. 1, 3 - 6 for each new
address. Repeat Instr. 2 for a new
256 byte page.
SDI
SII
SDO
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1100_00
p_pppp_pppx_xx
Instr 5 - 6.
Load “Write
EEPROM”
Command
SDI
SII
SDO
0_0001_0001_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter EEPROM Programming
mode.
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