參數(shù)資料
型號(hào)： PHX1N50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
中文描述： 1.4 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 24K
代理商： PHX1N50E
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX1N50E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5
UNIT
K/W
R
th j-a
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 0.25 mA
V
DS
= 500 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 1 A
2.0
-
-
-
-
3.0
10
0.1
10
4.5
4.0
100
1.0
100
5.0
V
μ
A
mA
nA
I
GSS
R
DS(ON)
Gate-source leakage current
Drain-source on-state
resistance
Source-drain diode forward
voltage
V
SD
I
F
= 2 A ;V
GS
= 0 V
-
0.8
1.2
V
November 1996
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHX1N60E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
PHX23NQ10T N-channel TrenchMOS transistor
PHX2N40E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
PHX2N50E PowerMOS transistors Avalanche energy rated
PHX2N60E PowerMOS transistors Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E
PHX20N06T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX20N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX23NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHX23NQ10T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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