參數(shù)資料
型號(hào): PHW9N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: GT 10C 10#16 SKT PLUG RTANG
中文描述: 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁數(shù): 2/9頁
文件大?。?/td> 102K
代理商: PHW9N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 9 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
50 V; R
= 50
; V
= 10 V
MIN.
-
MAX.
700
UNIT
mJ
E
AR
Repetitive avalanche energy
2
I
= 9 A; t
= 2.5
μ
s; T
prior to
-
18
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
9
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.8
K/W
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
45
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 600 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
600
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 5 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 5 A
-
0.68
3.0
6.5
2
80
10
75
6.8
37
11
32
98
37
3.5
4.5
0.8
4.0
-
100
1000
200
100
12
55
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
4
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 10 A; V
DD
= 480 V; V
GS
= 10 V
V
DD
= 300 V; R
D
= 30
;
R
G
= 5.6
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT429 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1295
163
86
-
-
-
pF
pF
pF
2
pulse width and repetition rate limited by T
j
max.
December 1998
2
Rev 1.000
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