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參數(shù)資料
| 型號： | PHP47NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 267K |
| 代理商： | PHP47NQ10T |
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 May 2001
6 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 6.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
VGS = 10 V
20 V
4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
8.0 V
003aaa100
ID
(A)
VDS (V)
o
Tj = 175 oC
25 oC
100
80
60
40
20
0
0
2
4
6
8
ID
(A)
VGS (V)
003aaa101
VGS = 5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
10 V
8.0 V
60
55
50
45
40
35
30
25
20
15
5
25
45
65
85
105
ID (A)
125
(m
)
65
RDSon
003aaa102
-20
20
60
100
-60
140
Tj (oC)
180
1.0
2.0
0
a
1.2
1.4
1.6
1.8
0.8
0.6
0.4
0.2
003aaa103
a
R
DSon 25 C
)
---------------------------
=
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