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參數資料
| 型號： | PHP23NQ15T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 99K |
| 代理商： | PHP23NQ15T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP23NQ15T, PHB23NQ15T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 18 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
≤
25 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:15
MIN.
-
MAX.
180
UNIT
mJ
I
AS
Peak non-repetitive
avalanche current
-
23
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.1
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
150
133
2
1
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
6
75
90
-
252
10
100
0.05
10
-
500
44
-
9
-
20
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
10 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
GS
= 10 V; I
D
= 11 A
m
m
nA
μ
A
μ
A
nC
nC
nC
T
j
= 175C
I
GSS
I
DSS
V
DS
= 150 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 23 A; V
DD
= 120 V; V
GS
= 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 75 V; R
D
= 3.3
;
V
= 10 V; R
G
= 5.6
Resistive load
-
-
-
-
-
-
12
44
50
34
3.5
4.5
-
-
-
-
-
-
ns
ns
ns
ns
nH
nH
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1780
206
118
-
-
-
pF
pF
pF
August 1999
2
Rev 1.000
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