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參數(shù)資料
| 型號(hào)： | PHP212L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-channel enhancement mode MOS transistor |
| 中文描述： | 4000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | PHP212L |
1997 Jun 20
3
Philips Semiconductors
Objective specification
Dual P-channel enhancement
mode MOS transistor
PHP212L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an R
th a-tp
(ambient to tie-point) of 90 K/W.
5.
6.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per P-channel
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
30
±
12
4
16
3.5
2.6
1.1
1.5
+150
+150
V
V
A
A
W
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C; note 3
T
amb
= 25
°
C; note 4
T
amb
= 25
°
C; note 5
T
amb
= 25
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
2.6
10
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
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