參數(shù)資料
型號: PHP212L
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: Dual P-channel enhancement mode MOS transistor
中文描述: 4000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
文件頁數(shù): 2/8頁
文件大小: 62K
代理商: PHP212L
1997 Jun 20
2
Philips Semiconductors
Objective specification
Dual P-channel enhancement
mode MOS transistor
PHP212L
FEATURES
High-speed switching
No secondary breakdown
Very low on-state resistance
Low threshold.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
s
1
g
1
s
2
g
2
d
2
d
2
d
1
d
1
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM119
1
4
5
8
g
s
d
1
1
1
1
d
g
s
d
2
2
2
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
1.3
±
12
1.1
4
0.12
3.5
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.5
V
V
V
V
A
W
I
S
=
1.25 A
I
D
=
1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
=
2 A; V
GS
=
4.5 V
T
s
= 80
°
C
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