參數(shù)資料
型號(hào): PHP14NQ20T
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: TrenchMOS standard level FET
中文描述: 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 269K
代理商: PHP14NQ20T
Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 March 2002
8 of 14
9397 750 09535
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 15 A; V
DD
= 40 V and 160 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
V
DS
= 25 V
Fig 14. Forward transconductance as a function of
drain current; typical values.
12
8
4
0
0
40
10
20
30
QG (nC)
VGS
(V)
VDD = 40 V
VDD = 160 V
003aaa228
20
12
0
4
8
16
0
30
10
20
gfs
(S)
ID (A)
003aaa224
Unclamped inductive load; V
DD
25 V; R
GS
= 50
; V
GS
= 10 V; starting T
j
= 25
°
C and 150
°
C
Fig 15. Non-repetitive avalanche ruggedness current as a function of pulse duration; typical values.
003aaa230
10
1
10-1
102
IAS
(A)
1
10
10-1
10-2
10-3
tp (ms)
25
ο
C
Tj prior to avalanche = 150
ο
C
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