參數(shù)資料
型號(hào)： PHN70308/T3
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH
封裝： PLASTIC, SSOP-28
文件頁數(shù)： 8/10頁
文件大?。?/td> 132K
代理商： PHN70308/T3
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
Fig.17. Typical transconductance (isolation FET)
T
j = 25 C; gfs = f(ID)
Fig.18. Typical capacitances (spindle FET)
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.19. Typical capacitances (isolation FET)
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.20. Typical turn-on gate-charge characteristics
(spindle FET); V
GS = f(QG)
Fig.21. Typical turn-on gate-charge characteristics
(isolation FET); V
GS = f(QG)
Fig.22. Typical reverse diode current (spindle FET)
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
1
2
3
4
5
6
7
8
9
10
012
34567
89
10
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID X RDS(ON)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0123
45678
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 1A
Tj = 25 C
VDD = 20 V
10
100
1000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
2
4
6
8
1012
141618
2022
2426
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 1A
Tj = 25 C
VDD = 20 V
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
May 1999
7
Rev 1.000
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