參數(shù)資料
型號(hào)： PHM30NQ10T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS?? standard level FET
中文描述： 37.6 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 X 0.85, PLASTIC, SOT-685-1, QLPAK, HVSON-8
文件頁(yè)數(shù)： 2/13頁(yè)
文件大小： 275K
代理商： PHM30NQ10T
Philips Semiconductors
PHM30NQ10T
TrenchMOS standard level FET
Product data
Rev. 02 — 11 September 2003
2 of 13
9397 750 11842
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Duty cycle limited by maximum junction temperature.
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
QLPAK
Description
Plastic surface mounted package; no leads; 8 terminals.
Version
SOT685
PHM30NQ10T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
100
100
±
20
37.6
23.8
60
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
37.6
60
A
A
unclamped inductive load; I
D
= 14.2 A;
t
p
= 0.31 ms; V
DD
≤
100 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
I
D
= 1.4 A; t
p
= 0.031 ms; V
DD
≤
100 V;
R
GS
= 50
; V
GS
= 10 V
-
350
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
3.5
mJ
相關(guān)PDF資料
PDF描述
PHN603S TrenchMOS/ Schottky Diode Array Three Phase Brushless d.c. Motor Driver(TrenchMOS/肖特基二極管陣列三相位無(wú)刷d.c.馬達(dá)驅(qū)動(dòng)器)
PHN70308 N-channel enhancement mode TrenchMOS transistor array(N溝道增強(qiáng)型TrenchMOS晶體管陣列)
PHP101NQ03LT TrenchMOS logic level FET
PHU101NQ03LT TrenchMOS logic level FET
PHP109 P-channel enhancement mode MOS transistor(P溝道增強(qiáng)型MOS晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHM30NQ10T,518 功能描述:MOSFET N-CH 100V 37.6A SOT685-1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
PHM3925DL,115 制造商:NXP Semiconductors 功能描述:PHM3925DL/MLFPAK/REEL7// - Tape and Reel
PHM4430DL,115 制造商:NXP Semiconductors 功能描述:PHM4430DL/MLFPAK/REEL7// - Tape and Reel
PHM5601 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:MOSFET MODULE Single 560A/150V
PHM5601_1 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:560A 150V
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*