參數(shù)資料
型號: PHE95N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LOW PROFILE TO-220AB, I2PAK-3
文件頁數(shù): 8/15頁
文件大小: 304K
代理商: PHE95N03LT
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 02 February 2001
8 of 15
9397 750 07814
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 24 V, 12 V and 6 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ad82
0
15
30
45
60
75
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03ad84
0
2
4
6
8
10
V
GS
(V)
0
30
60
90
Q
G
(nC)
I
D
= 50 A
T
j
= 25 oC
V
DD
= 6 V12 V 24 V
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