參數(shù)資料
型號(hào): PHE95N03LT
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LOW PROFILE TO-220AB, I2PAK-3
文件頁(yè)數(shù): 6/15頁(yè)
文件大?。?/td> 304K
代理商: PHE95N03LT
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 02 February 2001
6 of 15
9397 750 07814
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
I
D
x R
DSON
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad78
0
15
30
45
60
75
I
D
(A)
0
0.4
0.8
1.2
1.6
2
V
DS
(V)
3 V
5 V
T
j
= 25oC
V
GS
= 2.5V
10 V
3.5 V
03ad80
0
15
30
45
60
75
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03ad79
0
0.01
0.02
0.03
0.04
0.05
0.06
R
DSon
(
)
0
15
30
45
60
75
I
D
(A)
2.5 V
V
GS
= 3 V
T
j
= 25 oC
5V
10 V
3.5 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
°
)
---------------------------
=
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