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參數資料
| 型號： | PHD87N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| 中文描述： | 75 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | PHD87N03LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP87N03LT, PHB87N03LT
PHD87N03LT
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
VGS = 10V
2.2 V
2.4 V
Tj = 25 C
2 V
2.6 V
4.5 V
2.8 V
3 V
5 V
0
5
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
25
30
35
40
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0
5
10
15
25
30
35
40
45
50
Drai20
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
2.8V
3 V
2.6 V
2.2 V
2.4 V
4.5 V
2 V
5 V
Normalised On-state Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction temperature, Tj (C)
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
Junction Temperature, Tj (C)
40
60
80
100
120
140
160
180
typical
maximum
minimum
October 1999
4
Rev 1.600
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