參數(shù)資料
型號(hào): PHD2N60E
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-428, 3 PIN
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 94K
代理商: PHD2N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.20. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.21. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
August 1998
8
Rev 1.100
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