參數(shù)資料
型號: PHB3N40E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-404, 3 PIN
文件頁數(shù): 9/10頁
文件大小: 94K
代理商: PHB3N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N40E, PHB3N40E, PHD3N40E
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
Fig.22. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.23. SOT428 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
tab
0.3
0.5
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
7.0
7.0
2.15
2.5
4.57
1.5
August 1998
9
Rev 1.100
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