- 您現(xiàn)在的位置：買賣IC網 > PDF目錄367941 > PHB3N40E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHB3N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 94K |
| 代理商： | PHB3N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N40E, PHB3N40E, PHD3N40E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 1.25 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
PHP2N40
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID x RDS(on)max
Tj = 25 C
150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
2.5
PHP2N40
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
1
10
100
1000
PHP2N40
Drain-source voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1998
5
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| PHD3N40E | PowerMOS transistors Avalanche energy rated |
| PHP3N50 | PowerMOS transistor |
| PHP42N03LT | TrenchMOS transistor Logic level FET |
| PHP42N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHP44N06LT | TrenchMOS transistor Logic level FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHB3N4XF | 制造商:Eaton Corporation 功能描述:PISTOL HANDLE, BLACK, EXTENDED, Accessory Type:Pistol Handle, For Use With:R9 Se |
| PHB3N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB3N60T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 4.8A I(D) | SOT-404 |
| PHB42N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
發(fā)布緊急采購，3分鐘左右您將得到回復。