參數(shù)資料
型號: PHB34NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應(yīng)管)
中文描述: 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/12頁
文件大?。?/td> 115K
代理商: PHB34NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP34NQ10T, PHB34NQ10T
PHD34NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
40
45
50
55
60
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 34A
Tj = 25 C
VDD = 20 V
VDD = 80 V
1
0.001
10
100
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Source-Drain Voltage, VSDS (V)
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
August 1999
6
Rev 1.000
相關(guān)PDF資料
PDF描述
PHD34NQ10T N-channel TrenchMOS transistor(N溝道TrenchMOS 晶體管邏輯電平場效應(yīng)管)
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