參數(shù)資料
型號: PHB2N60E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-404, 3 PIN
文件頁數(shù): 2/10頁
文件大?。?/td> 94K
代理商: PHB2N60E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N60E, PHB2N60E, PHD2N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 1 A;
t
p
= 0.32 ms; T
j
prior to avalanche = 25C;
V
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
144
UNIT
mJ
E
AR
Repetitive avalanche energy
2
I
= 1.9 A; t
= 1
μ
s; T
prior to
-
4
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
1.9
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
2.5
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
-
-
60
50
-
-
K/W
K/W
2
pulse width and repetition rate limited by T
j
max.
August 1998
2
Rev 1.100
相關PDF資料
PDF描述
PHP2N60E PowerMOS transistors Avalanche energy rated
PHD2N60E PowerMOS transistors Avalanche energy rated
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