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參數(shù)資料
| 型號： | PH7030L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS logic level FET |
| 中文描述： | 68 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 89K |
| 代理商： | PH7030L |
9397 750 14206
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 7 March 2005
6 of 12
Philips Semiconductors
PH7030L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values
T
j
= 25
°
C and 150
°
C; V
DS
> I
D
×
R
DSon
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 5.
Fig 6.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa387
0
10
20
30
40
50
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
4
2.8
2.5
3
3.6
3.2
V
GS
(V) = 3.4
10
003aaa388
0
5
10
15
20
1
2
3
4
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
003aaa389
0
10
20
30
40
0
5
10
15
20
I
D
(A)
R
DSon
(m
)
2.9 V
V
GS
(V) = 2.7 V
3 V
5 V
3.4 V
2.8 V
10 V
4 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon 25 C
)
------------------------------
=
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| PH7030L,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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