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參數(shù)資料
| 型號： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 123K |
| 代理商： | PF08134B |
PF08134B
Rev.1.01, May 13, 2004, page 7 of 13
Characteristic Curves
GSM mode (824 MHz to 849 MHz)
40
30
–60
–40
–50
–20
–30
0
20
10
–10
O
40
30
–60
–40
–50
–20
–30
0
20
10
–10
100
90
0
10
20
40
30
60
50
80
70
100
90
0
10
20
40
30
60
50
80
70
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
GSM mode (824 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
10
–10 –8 –6 –4 –2
0
2
4
8
6
GSM mode (824 MHz) Eff vs. Pout
40
0
5
10
15
20
25
30
35
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
GSM mode (849 MHz) Eff vs. Pout
40
0
5
10
15
20
25
30
35
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
O
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Eff
GSM mode (849 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
GSM mode (824 MHz) Pout, Eff vs. Pin
Input power Pin (dBm)
O36.0
31.0
31.5
33.0
32.5
32.0
34.5
34.0
33.5
35.5
35.0
36.0
35.5
35.0
31.0
31.5
33.0
32.5
32.0
34.5
34.0
33.5
60
35
40
45
50
55
E
Eff
Pout
Eff
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 33.5 dBm
10
–10 –8 –6 –4 –2
0
2
4
8
6
GSM mode (849 MHz) Pout, Eff vs. Pin
Input power Pin (dBm)
O
60
35
45
40
50
55
E
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 33.5 dBm
Eff
Pout
Pout
Pout
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