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參數(shù)資料
| 型號(hào)： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大小： | 123K |
| 代理商： | PF08134B |
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PF08134B
Rev.1.01, May 13, 2004, page 12 of 13
PCS mode (1850 MHz to 1910 MHz)
(cont.)
–8
–6
–4
–2
0
2
4
6
8
PCS mode (1850 MHz) Pout vs. Pin (Temperature variation)
35
Input power Pin (dBm)
O
Vapc = 2.2 V
35
30
1600
32
31
33
34
1700
1650
1750 1800 1850 1900 1950 2000
DCS, PCS mode Pout, Eff vs. f
Frequency f (MHz)
O
60
35
40
45
50
55
E
Eff
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
10
0.01
0.1
1
–50–40 –30 –20 –10
10
0
20
30
40
PCS mode (1850 MHz) Idd vs. Pout
Output power Pout (dBm)
S
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
10
0.01
0.1
1
–50–40 –30 –20 –10
10
0
20
30
40
PCS mode (1910 MHz) Idd vs. Pout
Output power Pout (dBm)
S
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
37
36
31
32
33
34
35
O
PCS mode Pout vs. Vdd
3.1
Supply voltage Vdd (V)
3.3
3.5
3.7
3.9
4.1
4.3
4.5
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25
°
C
35
29
31
30
32
34
33
29
31
30
32
34
33
–8
–6
–4
–2
0
2
4
6
8
PCS mode (1910 MHz) Pout vs. Pin (Temperature variation)
Input power Pin (dBm)
O
Vapc = 2.2 V
Pout
1910 MHz
1850 MHz
Vdd = 3.1 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 25
°
C
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