參數(shù)資料
型號: PDTC143Z
廠商: NXP Semiconductors N.V.
英文描述: NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm
中文描述: NPN配電阻型晶體管;R1=4.7 千歐姆, R2 =47 千歐姆
文件頁數(shù): 5/14頁
文件大?。?/td> 93K
代理商: PDTC143Z
2004 Aug 16
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = 47 k
PDTC143Z series
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT883
SOT416
SOT490
in free air
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
notes 1 and 2
250
500
500
625
500
833
500
K/W
K/W
K/W
K/W
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
1.3
3.3
TYP.
0.6
0.9
4.7
MAX.
UNIT
I
CBO
I
CEO
collector-base cut-off current
collector-emitter cut-off current
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A; T
j
= 150
°
C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10 mA
I
C
= 5 mA; I
B
= 0.25 mA
I
C
= 100
μ
A; V
CE
= 5 V
I
C
= 5 mA; V
CE
= 0.3 V
100
1
50
170
100
0.5
6.1
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
V
V
k
resistor ratio
8
10
12
C
c
collector capacitance
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
2.5
pF
R1
相關(guān)PDF資料
PDF描述
PDTC143ZS NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm
PDTC143ZK NPN resistor-equipped transistor
PDTC143EK NPN resistor-equipped transistor
PDTC143ES NPN resistor-equipped transistor
PDTC144E NPN resistor-equipped transistors; R1 = 47 k ohm, R2 = 47 k ohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PDTC143ZE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW
PDTC143ZE T/R 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
PDTC143ZE,115 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
PDTC143ZE115 制造商:NXP Semiconductors 功能描述:BRT TRANSISTOR NPN 50V 100M 制造商:NXP Semiconductors 功能描述:TRANS NPN W/RES 50V SOT-416
PDTC143ZEF 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ