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參數(shù)資料
| 型號： | PDTC143Z |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm |
| 中文描述： | NPN配電阻型晶體管;R1=4.7 千歐姆, R2 =47 千歐姆 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 93K |
| 代理商： | PDTC143Z |
2004 Aug 16
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = 47 k
PDTC143Z series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Refer to standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT883 standard mounting conditions; FR4 with 60
μ
m copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTC143ZE
PDTC143ZEF
PDTC143ZK
PDTC143ZM
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
SOT416
SOT490
SOT346
SOT883
PDTC143ZS
PDTC143ZT
PDTC143ZU
SOT54
SOT23
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT883
SOT416
SOT490
storage temperature
junction temperature
operating ambient
temperature
open emitter
open base
open collector
50
50
10
V
V
V
+30
5
100
100
V
V
mA
mA
I
O
I
CM
P
tot
T
amb
≤
25
°
C
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
notes 1 and 2
65
65
500
250
250
200
250
150
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTC143ZS | NPN resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm |
| PDTC143ZK | NPN resistor-equipped transistor |
| PDTC143EK | NPN resistor-equipped transistor |
| PDTC143ES | NPN resistor-equipped transistor |
| PDTC144E | NPN resistor-equipped transistors; R1 = 47 k ohm, R2 = 47 k ohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC143ZE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW |
| PDTC143ZE T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143ZE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC143ZE115 | 制造商:NXP Semiconductors 功能描述:BRT TRANSISTOR NPN 50V 100M 制造商:NXP Semiconductors 功能描述:TRANS NPN W/RES 50V SOT-416 |
| PDTC143ZEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ |
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