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參數(shù)資料
| 型號： | PDM31096LL100ST |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 100 ns, PDSO32 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 285K |
| 代理商： | PDM31096LL100ST |
PDM31096LL
8
Rev. 0.0 - 3/31/98
PRELIMINARY
Device Type
Power
Speed
Package
Type
Process
Temp. Range
Preferred
Shipping
Container
Commercial (0
° to +70°C)
70
85
100
LL
Low Power
Blank
Blank Tubes
TR
Tape & Reel
TY
Tray
PDM31096 - 4 Meg (512Kx8) Static RAM
XXXXX
X
XX
X
T
32-pin Plastic TSOP (I)
ST
32-pin Plastic STSOP (I)
AC Electrical Characteristics
NOTES: (For two previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured
±500 mV from steady state voltage.
Description
-70
-85
-100
WRITE Cycle
Sym
Min.
Max.
Min.
Max.
Min.
Max.
Units
WRITE cycle time
tWC
70
85
100
ns
Chip enable to end of write
tCW
70
85
100
ns
Address valid to end of write
tAW
70
85
100
ns
Address setup time
tAS
00
0
ns
Address hold from end of write
tAH
00
0
ns
Write pulse width
tWP
50
ns
Data setup time
tDS
40
ns
Data hold time
tDH
00
0
ns
Write disable to output in low Z(4,5)
tLZWE
55
5
ns
Write enable to output in high Z(4,5)
tHZWE
30
ns
Ordering Information
Faster Memories for a Faster World
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| PDM31096SA10SO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Megabit 3.3V Static RAM 512K x 8-Bit |
| PDM31096SA10SOA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Megabit 3.3V Static RAM 512K x 8-Bit |
| PDM31096SA10SOATR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Megabit 3.3V Static RAM 512K x 8-Bit |
| PDM31096SA10SOATY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 Megabit 3.3V Static RAM 512K x 8-Bit |
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