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參數(shù)資料
| 型號(hào)： | PD57070 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁(yè)數(shù)： | 13/13頁(yè) |
| 文件大小： | 296K |
| 代理商： | PD57070 |
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PD57070 - PD57070S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD57070-E | 功能描述:射頻MOSFET電源晶體管 RF Pwr Transistors LDMOST Plastic N Ch RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57070S | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 7 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57070S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57070STR-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
| PD57070TR-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
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