參數(shù)資料
型號(hào): PD57006-01
英文描述: RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY
中文描述: 射頻功率晶體管LDMOST塑料家庭
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 39K
代理商: PD57006-01
PD57002-01
2/4
ELECTRICAL SPECIFICATION (T
CASE
= 25
°
C)
STATIC
Symbol
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
Symbol
P
1dB
G
P
Test Conditions
V
DS
= 28 V
V
DS
= 0 V
Min.
Typ.
Max.
Unit
μ
A
μ
A
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 28 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
1
1
I
D
= 10 mA
I
D
= 125 mA
I
D
= 200 mA
V
DS
= 28 V
V
DS
= 28 V
V
DS
= 28 V
2.0
5.0
V
0.7
0.9
V
--
mho
f = 1 MHz
7.1
pF
f = 1 MHz
5.8
pF
f = 1 MHz
0.1
pF
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 28 V I
DQ
= 10 mA
V
DD
= 28 V I
DQ
= 10 mA
V
DD
= 28 V I
DQ
= 10 mA
V
DD
= 28 V I
DQ
= 10 mA
ALL PHASE ANGLES
f = 960 MHz
2
W
P
OUT
= 2 W
P
OUT
= 2 W
P
OUT
= 2 W
f = 960 MHz
15
dB
η
D
f = 960 MHz
45
%
Load
mismatch
f = 960 MHz
10:1
VSWR
PD57002S
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
925
TBD
TBD
945
TBD
TBD
960
TBD
TBD
IMPEDANCE DATA
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
PIN CONNECTION
TOP VIEW
相關(guān)PDF資料
PDF描述
PD60T PIN PHOTODIODES
PD780336GC-XXX-9EV Microcontroller
PD7869 Optoelectronic
PD7XX11 Optoelectronic
PD802A2 Optoelectronic
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD57006-E 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006-E_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD57006S 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006S-E 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PD57006STR-E 功能描述:射頻MOSFET電源晶體管 RF Power Transistor N Chnl RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray