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參數(shù)資料
| 型號(hào)： | PD54003S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | PD54003S |
1/10
PRELIMINARY DATA
May 2000
PD54003 - PD54003S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD5400 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
PD54003
BRANDING
XPD54003
PowerSO-10RF
(Straight Lead)
ORDER CODE
PD54003S
BRANDING
XPD54003S
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
O
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain Source Voltage
25
V
V
GS
Gate-Source Voltage
±
20
V
I
D
Drain Current
4
A
P
DISS
Power Dissipation (@ Tc = 70
0
C)
52.8
W
T
j
Max. Operating Junction Temperature
165
0
C
T
STG
Storage Temperature
-65 to 165
0
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance
1.8
0
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PD54008 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD54008-PD54008S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD54008S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55003L | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55003 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD54003S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD54003STR-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD54003TR-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD54008 | 功能描述:射頻MOSFET電源晶體管 N-Ch 25 Volt 5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD54008-E | 功能描述:射頻MOSFET電源晶體管 RF Pwr Transistors LDMOST Plastic N Ch RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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