- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383738 > PD55003L (意法半導(dǎo)體) RF POWER TRANSISTORS The LdmoST Plastic FAMILY PDF資料下載
參數(shù)資料
| 型號： | PD55003L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 134K |
| 代理商： | PD55003L |
1/13
June, 17 2003
PD55003L
RF POWER TRANSISTORS
The LdmoSTPlastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
NEW LEADLESS PLASTIC PACKAGE
ESD PROTECTION
SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55003L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L boasts the excellent gain,
linearity and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT
.
PD55003L’s superior linearity performance makes
it an ideal solution for car mobile radio.
ORDER CODE
PD55003L
BRANDING
55003
PowerFLAT
(5x5)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
40
V
-0.5 to +15
V
2.5
A
14
W
150
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
5.7
°
C/W
PIN CONNECTION
TOP VIEW
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PD55003 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55003S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55008 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55008S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD55015 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD55003L-E | 功能描述:射頻MOSFET電源晶體管 RF POWER transistor LDMOST family N-Chan RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003S | 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD55003S-E-E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
| PD55003STR | 功能描述:射頻MOSFET電源晶體管 N-Ch 40 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。