參數(shù)資料
型號(hào): PCF85102C-2
廠商: NXP Semiconductors N.V.
英文描述: RESN CER CHIP 8.000MHZ0.5% -40 - 85C
中文描述: 256 × 8位CMOS EEPROM產(chǎn)品具有I2C總線接口
文件頁(yè)數(shù): 3/20頁(yè)
文件大?。?/td> 99K
代理商: PCF85102C-2
2000 Feb 15
3
Philips Semiconductors
Product specification
256
×
8-bit CMOS EEPROMs with
I
2
C-bus interface
PCF85102C-2; PCF85103C-2
1
FEATURES
Low power CMOS:
– maximum operating current: 2.0 mA
– maximum standby current 10
μ
A (at 6.0 V),
typical 4
μ
A.
Non-volatile storage of:
– 2 kbits organized as 256
×
8-bit.
Single supply with full operation down to 2.5 V
On-chip voltage multiplier
Serial input/output I
2
C-bus
Write operations:
– byte write mode
– 8-byte page write mode
(minimizes total write time per byte).
Read operations:
– sequential read
– random read.
Internal timer for writing (no external components)
Power-on reset
High reliability by using a redundant storage code
Endurance: 1000000 Erase/Write (E/W) cycles at
T
amb
= 22
°
C
10 years non-volatile data retention time
Standard industrial pinning (pin 7 not connected)
Up to sixteen EEPROMs addressable in one I
2
C-bus
using both PCF85102 and PCF85103 in combination.
2
GENERAL DESCRIPTION
The PCF85102C-2 and PCF85103C-2 (further referred to
as PCF8510xC-2) are 2 kbits (256
×
8-bit) floating gate
Electrically Erasable Programmable Read Only Memories
(EEPROMs). Power consumption is low due to the full
CMOS technology used. The programming voltage is
generated on-chip, using a voltage multiplier.
The PCF8510x-2 is pin compatible to widely used
industrial pinning (pin 7 not connected).
As data bytes are received and transmitted via the serial
I
2
C-bus, a package using eight pins is sufficient. Up to
sixteen PCF8510xC-2 devices may be connected to the
I
2
C-bus. This is possible with the introduction of a second
device selection code. Chip select is accomplished by
three address inputs (A0, A1 and A2) for each
PCF8510xC-2 type.
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
I
DDR
supply voltage
supply current read
2.5
6.0
V
f
SCL
= 100 kHz
V
DD
= 2.5 V
V
DD
= 6.0 V
f
SCL
= 100 kHz
V
DD
= 2.5 V
V
DD
= 6.0 V
V
DD
= 2.5 V
V
DD
= 6.0 V
60
200
μ
A
μ
A
I
DDW
supply current E/W
0.6
2.0
3.5
10
mA
mA
μ
A
μ
A
I
DDstb
standby supply current
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