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參數(shù)資料
| 型號： | PBYR645CTD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 4 X 1 COMPACT VGA SWITCH |
| 中文描述： | 6 A, 45 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 33K |
| 代理商： | PBYR645CTD |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR645CT series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 35 V/ 40 V/ 45 V
I
O(AV)
= 10 A
V
F
≤
0.6V
GENERAL DESCRIPTION
PINNING
SOT82
Dual, common cathode schottky
rectifier
diodes
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
DESCRIPTION
in
a
plastic
1
anode 1
2
cathode
3
anode 2
ThePBYR645CT seriesissupplied
in the conventional leaded SOT82
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR6
35CT 40CT 45CT
35
40
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current diode
-
45
V
V
RWM
-
35
40
45
V
V
R
I
O(AV)
T
mb
≤
100 C
square wave;
δ
= 0.5; T
mb
≤
119 C
-
-
35
40
10
45
V
A
I
FRM
square wave;
δ
= 0.5; T
mb
≤
119 C
-
10
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
-
75
82
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
150
C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
5
-
4
100
-
K/W
K/W
K/W
k
a1
1
a2
3
2
1
2
3
May 1998
1
Rev 1.200
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