參數(shù)資料
型號(hào)： PBYR745X
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： HD VIEW RECEIVER
中文描述： 7.5 A, 45 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, SOD-113, 2 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 33K
代理商： PBYR745X
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR745X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Low
schottky rectifier diodes in a full pack
plastic
envelope
forward voltage drop, absence of
stored
charge.
reversesurgecapability.Thedevices
areintendedforuseinswitchedmode
power supplies and high frequency
circuits
in
general
conductionandzeroswitchinglosses
are important.
leakage,
platinum
barrier,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
featuring
low
PBYR7-
35X
35
40X
40
45X
45
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Average forward current
V
and
guaranteed
V
F
I
F(AV)
0.57
7.5
0.57
7.5
0.57
7.5
V
A
where
low
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-40
40
40
40
7.5
UNIT
-35
35
35
35
-45
45
45
45
V
RRM
V
RWM
V
R
I
F(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
-
-
-
-
V
V
V
A
T
hs
≤
128 C
square wave;
δ
= 0.5;
T
hs
≤
123 C
I
F(RMS)
I
FRM
RMS output current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
-
-
10.6
15
A
A
T
≤
123 C
t = 10 ms
t = 8.3 ms
sinusoidal T
= 125 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
Non-repetitive peak forward
current
-
-
100
110
A
A
I
2
t
I
RRM
I
RSM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
Non-repetitive peak reverse
current
Storage temperature
Operating junction temperature
-
-
-
50
1
1
A
2
s
A
A
t
p
= 100
μ
s
T
stg
T
j
-65
-
175
150
C
C
1
2
case
k
1
a
2
August 1996
1
Rev 1.000
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