參數(shù)資料
型號: PBSS5350S
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 50 V low VCEsat PNP transistor
中文描述: 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 8/8頁
文件大?。?/td> 72K
代理商: PBSS5350S
Koninklijke Philips Electronics N.V. 2001
SCA73
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Contact information
For additional information please visit
http://www.semiconductors.philips.com
.
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Fax:
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Printed in The Netherlands
613514/01/pp
8
Date of release:
2001 Nov 19
Document order number:
9397 750 08946
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相關代理商/技術參數(shù)
參數(shù)描述
PBSS5350S,126 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS5350SA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:50 V low VCEsat PNP transistor
PBSS5350SS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
PBSS5350SS T/R 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS5350SS,115 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2