- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄190023 > PBSS2515YPN,115 (NXP SEMICONDUCTORS) 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd PDF資料下載
參數(shù)資料
| 型號： | PBSS2515YPN,115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 430 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT363 (SC-88); Container: Tape reel smd |
| 中文描述： | 500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 100K |
| 代理商： | PBSS2515YPN,115 |
2005 Jan 11
2
Philips Semiconductors
Product specication
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
FEATURES
Low collector-emitter saturation voltage
High current capability
Replaces two SC-70 packaged low VCEsat transistors on
same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATION
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN/PNP low VCEsat transistor pair in a SC-88 plastic
package.
MARKING
Note
1. * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PBSS2515YPN
N8*
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
m
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM445
13
2
TR1
TR2
6
4
5
Top view
12
3
65
4
Fig.1
Simplified outline SC-88 (SOT363) and
symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PBSS2515YPN
SC-88
plastic surface mounted package; 6 leads
SOT363
相關PDF資料 |
PDF描述 |
|---|---|
| PBSS2540E,115 | 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd |
| PBSS2540M,315 | 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd |
| PBU602 | 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| PBW.3K.93C.CLCT90Z | 9/125 um, SINGLE MODE, SIMPLEX FIBER OPTIC CONNECTOR, SOCKET |
| PBW.3K.93C.CLCT96Z | 9/125 um, SINGLE MODE, SIMPLEX FIBER OPTIC CONNECTOR, SOCKET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS2540E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:40 V, 500 mA NPN low VCEsat (BISS) transistor |
| PBSS2540E T/R | 功能描述:兩極晶體管 - BJT LOW VCESAT (BLISS) TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2540E,115 | 功能描述:兩極晶體管 - BJT LOW VCESAT (BLISS) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2540E115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN 40V 0.5A LOW SAT SC75 |
| PBSS2540F | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-490 |
發(fā)布緊急采購，3分鐘左右您將得到回復。