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參數(shù)資料
| 型號(hào)： | PBMB100B12 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT MODULE H-Bridge 100A 1200V |
| 中文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-14 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 126K |
| 代理商： | PBMB100B12 |
IGBT
MODULE
H-Bridge 100A 1200V
PBMB100B12
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
°
C)
Item
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
PBMB100B12
1200
+/ - 20
100
200
500
-40 to +150
-40 to +125
2500
Unit
V
V
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
A
Collector Power Dissipation
J unction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
°
C)
Item
DC
Forward Current
1 ms
W
°
C
°
C
V
F
TOR
3
N
m
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=1200V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=100A,V
GE
=15V
V
CE
=5V,I
C
=100mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 600V
R
L
= 6 ohm
R
G
= 10 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
1.9
-
8300
0.25
0.40
0.25
0.80
Max.
2.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
μ
A
V
V
pF
Switching Time
μ
s
Symbol
I
F
I
FM
Rated Value
100
200
Unit
A
Characteristic
Symbol
V
F
t
rr
Test Condition
I
F
=100A,V
GE
=0V
I
F
=100A,V
GE
=-10V,di/dt=200A/
μ
s
Min.
-
-
Typ.
1.9
0.2
Max.
2.4
0.3
Unit
V
μ
s
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min.
-
-
Typ.
-
-
Max.
0.24
0.42
Unit
IGBT
DIODE
Thermal Impedance
R
th(j-c)
J unction to Case
°
C/W
8- fasten- tab No 110
Dimension(mm)
３
１
４
５
２
７
６
1
4
1
3
９
11
1
2
Approximate Weight : 650g
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PBMB150A6 | IGBT MODULE H-Bridge 150A 600V |
| PBMB150B12 | IGBT MODULE H-Bridge 150A 1200V |
| PBMB200A6 | IGBT MODULE H-Bridge 200A 600V |
| PBMB300A6 | Photointerruptors 0.25mm slit width 0.18mA min 0.7V |
| PBMB50A6 | IGBT MODULE H_Bridge 50A 600V |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBMB100E6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT Module-H Bridge 100A, 600V |
| PBMB150A6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 150A 600V |
| PBMB150B12 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 150A 1200V |
| PBMB150E6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT Module-H Bridge 150A, 600V |
| PBMB200A6 | 制造商:NIEC 制造商全稱:Nihon Inter Electronics Corporation 功能描述:IGBT MODULE H-Bridge 200A 600V |
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