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參數(shù)資料
| 型號(hào)： | PBH308AC |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | THYRISTOR MODULE |
| 中文描述： | 47.1 A, 800 V, SCR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 184K |
| 代理商： | PBH308AC |
Electrical
Thermal Characteristics
Maximum Value.
Min.
Typ.
0.25
Characteristics
Symbol
Test Conditions
Max.
10
10
1.45
200
100
50
4
2.5
2
Unit
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
I
DM
I
RM
V
TM
V
DM
= V
DRM,
Tj= 125
°
C
V
RM
= V
RRM,
Tj= 125
°
C
I
TM
= 90A, Tj=25
°
C
mA
mA
V
Tj=-40
°
C
Tj=25
°
C
Tj=125
°
C
Tj=-40
°
C
Tj=25
°
C
Tj=125
°
C
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
mA
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
V
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
V
GD
V
D
=2/3V
DRM
Tj=125
°
C
V
dv/dt V
D
=2/3V
DRM
Tj=125
°
C
500
V/
μ
s
Turn-Off Time
tq
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/
μ
s, V
R
=100V
-di/dt=20A/
μ
s, Tj=125
°
C
100
μ
s
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
tgt
td
tr
I
L
I
H
6
2
4
μ
s
μ
s
μ
s
mA
V
D
=2/3V
DRM
Tj=125
°
C
I
G
=200mA, di
G
/dt=0.2A/
μ
s
Tj=25
°
C
Tj=25
°
C
100
50
Rth(j-c) J unction to Case
Rth(c-f)Base Plate to Heat Sink
with Thermal Compound
0.44
Thermal Resistance *1
0.1
°
C/W
Value Per 1Arm
*1:Value Per Module
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