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參數資料
| 型號： | P6SMB33CA/5B-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 3/3頁 |
| 文件大?。?/td> | 41K |
| 代理商： | P6SMB33CA/5B-E3 |
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
P
)
P
)
D
T
A
— Ambient Temperature (
°
C)
Fig. 2
–
Pulse Derating Curve
P
P
—
P
Fig. 1
–
Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
μ
s
1.0
μ
s
10
μ
s
t
d
— Pulse Width (sec.)
100
μ
s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6
–
Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60H
Z
10
200
100
1
10
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I
F
—
P
t
p
— Pulse Duration (sec)
T
°
C
Fig. 5
–
Typical Transient Thermal
Impedance
0.1
0.001
1.0
10
100
0.01
0.1
1
10
100
1000
0
50
100
150
I
P
—
P
R
Fig. 3
–
Pulse Waveform
T
= 25
°
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
tr = 10
μ
sec.
Peak Value
I
PPM
Half Value — IPP
I
PPM
2
td
10/1000
μ
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J
Fig. 4
–
Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
V
WM
— Reverse Stand-Off Voltage (V)
T
J
= 25
°
C
f = 1.0MHz
Vsig = 50mVp-p
V
R
,
Measured at
Stand-Off
Voltage, V
WM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Document Number 88370
13-Nov-02
www.vishay.com
3
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相關代理商/技術參數 |
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| P6SMB33CA-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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