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參數(shù)資料
| 型號： | P6SMB33CA/5B-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 41K |
| 代理商： | P6SMB33CA/5B-E3 |
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.V
F
= 3.5V at I
F
= 50A (uni-directional only)
Breakdown Voltage
General
Device Marking
V
(BR)
at I
T
(1)
Semiconductor
Code
(V)
Part Number
UNI
BI
Min
Max
P6SMB6.8A
6V8A
6V8C
6.45
7.14
P6SMB7.5A
7V5A
7V5C
7.13
7.88
P6SMB8.2A
8V2A
8V2C
7.79
8.61
P6SMB9.1A
9V1A
9V1C
8.65
9.55
P6SMB10A
10A
10C
9.50
10.5
P6SMB11A
11A
11C
10.5
11.6
P6SMB12A
12A
12C
11.4
12.6
P6SMB13A
13A
13C
12.4
13.7
P6SMB15A
15A
15C
14.3
15.8
P6SMB16A
16A
16C
15.2
16.8
P6SMB18A
18A
18C
17.1
18.9
P6SMB20A
20A
20C
19.0
21.0
P6SMB22A
22A
22C
20.9
23.1
P6SMB24A
24A
24C
22.8
25.2
P6SMB27A
27A
27C
25.7
28.4
P6SMB30A
30A
30C
28.5
31.5
P6SMB33A
33A
33C
31.4
34.7
P6SMB36A
36A
36C
34.2
37.8
P6SMB39A
39A
39C
37.1
41.0
P6SMB43A
43A
43C
40.9
45.2
P6SMB47A
47A
47C
44.7
49.4
P6SMB51A
51A
51C
48.5
53.6
P6SMB56A
56A
56C
53.2
58.8
P6SMB62A
62A
62C
58.9
65.1
P6SMB68A
68A
68C
64.6
71.4
P6SMB75A
75A
75C
71.3
78.8
P6SMB82A
82A
82C
77.9
86.1
P6SMB91A
91A
91C
86.5
95.5
P6SMB100A
100A
100C
95.0
105
P6SMB110A
110A
110C
105
116
P6SMB120A
120A
120C
114
126
P6SMB130A
130A
130C
124
137
P6SMB150A
150A
150C
143
158
P6SMB160A
160A
160C
152
168
P6SMB170A
170A
170C
162
179
P6SMB180A
180A
180C
171
189
P6SMB200A
200A
200C
190
210
P6SMB220A
220A
220C
209
231
P6SMB250A
250A
—
237
263
P6SMB300A
300A
—
285
315
P6SMB350A
350A
—
333
368
P6SMB400A
400A
—
380
420
P6SMB440A
440A
—
418
462
P6SMB480A
480A
—
456
504
P6SMB510A
510A
—
485
535
P6SMB540A
540A
—
513
567
Maximum
Reverse
Leakage
at V
WM
I
D
(
μ
A)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
I
PPM
(2)
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.8
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
Maximum
Temp.
Coefficient
of V
(BR)
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Test
Current
I
T
(mA)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
185
214
256
300
342
376
408
434
459
Notes:
(1)
Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88370
13-Nov-02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P6SMB300A/51 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMB300A/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMB350A/52 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMB350A/5B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMB440A/51 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6SMB33CA-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| P6SMB33CA-E3/5B | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 33V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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