- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383733 > P6NC60 (意法半導(dǎo)體) N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET PDF資料下載
參數(shù)資料
| 型號： | P6NC60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET |
| 中文描述： | N溝道600V的- 1ohm - 6A條TO-220/TO-220FP/I2PAK PowerMESH第二MOSFET的⑩ |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 364K |
| 代理商： | P6NC60 |
3/10
STP6NC60/FP/STB6NC60-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 480V, I
D
= 6 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
16
ns
t
r
Rise Time
14
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
35
45.5
nC
Gate-Source Charge
5.5
nC
Gate-Drain Charge
17.2
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
13
ns
Fall Time
16
ns
Cross-over Time
23
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
6
A
Source-drain Current (pulsed)
24
A
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
I
SD
= 6 A, di/dt = 100A/μs
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
450
ns
Reverse Recovery Charge
2.9
μC
Reverse Recovery Current
13
A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| P912XDP512F0CAA | Covers, S12XD, S12XB & S12XA Families |
| P912XDP512F0MFUR | Covers, S12XD, S12XB & S12XA Families |
| P912XDP512F0MFV | Covers, S12XD, S12XB & S12XA Families |
| P912XDP512F0MFVR | Covers, S12XD, S12XB & S12XA Families |
| P912XDP512F0MPV | Covers, S12XD, S12XB & S12XA Families |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P6NC80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| P6NGM-FD | 制造商:Micro-Star International 功能描述:LGA775, MATX, GFORCE 7100, VID, GBE, DVI, TPM OPTION - Bulk |
| P6NGM-L | 制造商:Micro-Star International 功能描述:MATX, LGA775, GFORCE7050 CHIPSETS,2DDR2,PCIE,2PCI,LAN,VID - Bulk |
| P-6P800MAH | 制造商:Panasonic Industrial Company 功能描述:Battery NiMH AA 1.2V 800mAh |
| P6P82PS01AG-08CR | 制造商:ON Semiconductor 功能描述:3.3V GP EMI-PS - Tape and Reel 制造商:ON Semiconductor 功能描述:3.3V GP EMI-PS - Cut TR (SOS) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。