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參數(shù)資料
| 型號(hào)： | P6NC60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET |
| 中文描述： | N溝道600V的- 1ohm - 6A條TO-220/TO-220FP/I2PAK PowerMESH第二MOSFET的⑩ |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 364K |
| 代理商： | P6NC60 |
STP6NC60/FP/STB6NC60-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
TO-220/I
2
PAK
1.0
TO-220FP
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
3.1
°C/W
°C/W
°C/W
62.5
0.5
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
6
Unit
A
320
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
1.0
1.2
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
6
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
6.5
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
1020
pF
Output Capacitance
145
pF
C
rss
Reverse Transfer
Capacitance
21
pF
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