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參數(shù)資料
| 型號： | P6503NJG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N- & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 蘼 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 250K |
| 代理商： | P6503NJG |
3
Mar-18-2005
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
NIKO-SEM
Turn-On Delay Time
2
t
d(on)
N-Ch
P-Ch
7
8
11
12
Rise Time
2
t
r
N-Ch
P-Ch
12
11
18
18
Turn-Off Delay Time
2
t
d(off)
N-Ch
P-Ch
12
14
18
21
Fall Time
2
t
f
N-Channel
V
DS
= 15V, R
L
= 15
I
D
1A, V
GS
= 10V, R
GEN
= 6
P-Channel
V
DS
= -15V, R
L
= 15
I
D
-1A, V
GS
= -10V, R
GEN
= 6
N-Ch
P-Ch
7
8
11
12
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°
C)
I
F
= 0.9A, V
GS
= 0V
Forward Voltage
1
V
SD
I
F
= -0.9A, V
GS
= 0V
N-Ch
P-Ch
1.2
-1.2
V
I
F
= 0.9A, dl
F
/dt = 100A /
μ
S
Reverse Recovery Time
t
rr
I
F
= -0.9A, dl
F
/dt = 100A /
μ
S
N-Ch
P-Ch
40
40
80
80
nS
1
Pulse test : Pulse Width
≤
300
μ
sec, Duty Cycle
≤
2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THIS PRODUCT MARKED WITH “50YWW”
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
50YWW
Marking Description:
5 - N+P MOSFET
0 - Serial Number
Y - Year
W - Week
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