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參數(shù)資料
| 型號(hào)： | P6503NJG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N- & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 蘼 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 250K |
| 代理商： | P6503NJG |
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
2
Mar-18-2005
N- & P-Channel Enhancement Mode
Field Effect Transistor
P6503NJG
TSOPJW-8
Lead-Free
NIKO-SEM
LIMITS
UNIT
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
V
GS
= 0V, I
D
= 250
μ
A
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250
μ
A
N-Ch
P-Ch
30
-30
V
DS
= V
GS
, I
D
= 250
μ
A
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
N-Ch
P-Ch
0.9
-0.9
1.5
-1.5
2.5
-2.5
V
V
DS
= 0V, V
GS
= ±20V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
N-Ch
P-Ch
±100
±100
nA
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V, T
J
= 55 °C
N-Ch
P-Ch
10
-10
μ
A
V
DS
= 5V, V
GS
= 10V
On-State Drain Current
1
I
D(ON)
V
DS
=-5V, V
GS
= -10V
N-Ch
P-Ch
10
-10
A
V
GS
= 4.5V, I
D
= 3A
V
GS
= -4.5V, I
D
= -2A
N-Ch
P-Ch
72
170
120
250
V
GS
= 10V, I
D
= 4A
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= -10V, I
D
= -3A
N-Ch
P-Ch
48
100
65
150
m
V
DS
= 10V, I
D
= 3A
Forward Transconductance
1
g
fs
V
DS
= -10V, I
D
= -2A
N-Ch
P-Ch
6
3
S
DYNAMIC
Total Gate Charge
2
Q
g
N-Ch
P-Ch
5
5.5
7.5
6.6
Gate-Source Charge
2
Q
gs
N-Ch
P-Ch
0.8
1.2
Gate-Drain Charge
2
Q
gd
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 3A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -2A
N-Ch
P-Ch
1.0
0.9
nC
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