參數(shù)資料
型號: P4C1258-35JI
廠商: PYRAMID SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
中文描述: 64K X 4 STANDARD SRAM, 35 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, SOJ-24
文件頁數(shù): 3/9頁
文件大?。?/td> 185K
代理商: P4C1258-35JI
P4C1258
Page 3 of 9
Document #
SRAM123
REV OR
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
DATA RETENTION CHARACTERISTICS
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditions
CE
V
CC
–0.2V,
V
IN
V
–0.2V or
V
IN
0.2V
Min
2.0
0
t
RC
§
Typ.*
V
=
2.0V 3.0V
10
15
Max
V
=
2.0V 3.0V
1500
2000
Unit
V
μA
ns
ns
DATA RETENTION WAVEFORM
*T
A
= +125°C
§
t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
–15
160
–20
125
–25
115
–35
110
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
115
120
135
170
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