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參數(shù)資料
| 型號： | P4C1256-25JC |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 25 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-28 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 1155K |
| 代理商： | P4C1256-25JC |
W39L040
- 16 -
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to VSS Potential
-2.0 to +4.6
V
0 to +70
°C
Operating Temperature
-40 to +85
°C
Storage Temperature
-65 to +125
°C
Voltage on Any Pin to Ground Potential except A9
-2.0 to +4.6
V
Voltage on A9 Pin to Ground Potential
-2.0 to +13.0
V
Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability
of the device.
7.2 DC Operating Characteristics
(VDD = 3.3V
±0.3V, VSS = 0V, TA = 0 to 70° C or -40 to 85° C)
LIMITS
PARAMETER
SYM.
TEST CONDITIONS
MIN. TYP.
MAX.
UNIT
Power Supply
Current
IDD
#CE = #OE = VIL, #WE = VIH,
all DQs open, Address inputs =
VIL/VIH, at f = 5 MHz
-
10
20
mA
Standby VDD
Current (TTL input)
ISB1 #CE = VIH, all DQs open
Other inputs = VIL/VIH
-
1
2
mA
Standby VDD Current
(CMOS input)
ISB2
#CE = VDD -0.3V, all DQs open
Other inputs = VDD -0.3V/ VSS
-
2
25
A
Input Leakage
Current
ILI
VIN = VSS to VDD
-
1
A
Output Leakage
Current
ILO
VOUT = VSS to VDD
-
1
A
Input Low Voltage
VIL
-
-0.3
-
0.8
V
Input High Voltage
VIH
-
2.0
-
VDD +0.5
V
Output Low Voltage
VOL IOL = 2.1 mA
-
0.45
V
Output High Voltage
VOH IOH = -0.4 mA
2.4
-
V
7.3 Pin Capacitance
(VDD = 3.3V, TA = 25
° C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
TYP.
MAX.
UNIT
Input Capacitance
CIN
VIN = 0V
6
8
pF
Output Capacitance
COUT
VOUT = 0V
10
12
pF
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