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參數(shù)資料
| 型號： | P45N02 |
| 廠商： | Intersil Corporation |
| 英文描述： | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| 中文描述： | 45A條，20V的，0.022 Ohm的N通道功率MOSFET的邏輯電平 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | P45N02 |
3
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
50
175
30
t, RECTANGULAR PULSE DURATION (s)
10
1
10
-3
10
-2
10
-1
10
0
1
10
-5
P
DM
t
1
t
2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
10
-4
2
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θ
JC
x Z
θ
JC
+ T
C
Z
θ
J
,
T
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
,
DC
100
μ
s
100ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
V
DSS
MAX = 20V
T
C
= 25
o
C, T
J
= MAX RATED
10ms
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
500
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 5V
T
C
= 25
o
C
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