參數(shù)資料
型號： P45N02
廠商： Intersil Corporation
英文描述： 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
中文描述： 45A條，20V的，0.022 Ohm的N通道功率MOSFET的邏輯電平
文件頁數(shù)： 2/8頁
文件大?。?/td> 78K
代理商： P45N02
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFP45N02L, RF1S45N02L,
RF1S45N02LSM
20
20
±
10
UNITS
V
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
45
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
260
A
W
W/
o
C
o
C
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
20
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V,
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 45A, V
GS
= 5V
V
DD
= 15V, I
D
45A,
R
L
= 0.33
, V
GS
= 5V,
R
GS
= 5
-
-
0.022
Turn-On Time
t
ON
-
-
260
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
160
-
ns
Turn-Off Delay Time
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
60
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 16V,
I
D
45A,
R
L
= 0.35
-
50
60
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
30
36
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.5
1.8
nC
Input Capacitance
C
ISS
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1300
-
pF
Output Capacitance
C
OSS
-
724
-
pF
Reverse Transfer Capacitance
C
RSS
-
250
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.65
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 45A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
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