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| 型號： | P2N2369A |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 225K |
| 代理商： | P2N2369A |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR
P2N2369A
TO - 92
Plastic Package
LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T
a
=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Collector Emitter Voltage ( V
BE
=0)
Emitter Base Voltage
Collector Current Peak
Power Dissipation @ Ta=25oC
Operating And Storage Junction
Temperature Range
V
CEO
V
CBO
V
CES
V
EBO
I
CM
P
D
Junction to Ambient in free air
R
th(j-a)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
MAX
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Current
Collector Emitter Saturation Voltage
BV
CEO (sus)
* I
C
=10mA, I
B
=0
BV
CES
I
C
=10
μ
A, V
BE
=0
BV
CBO
I
C
=10
μ
A, I
E
=0
BV
EBO
I
E
=10
μ
A, I
C
=0
I
CBO
V
CB
=20V, I
E
=0 Ta=150oC
I
CES
V
CE
=20V, V
BE
=0
I
B
V
CE
=20V, V
BE
=0
V
CE(sat)
*
I
C
=10mA, I
B
=1mA
I
C
=30mA, I
B
=3mA
I
C
=100mA, I
B
=10mA
I
C
=10mA, I
B
=1mA
Ta=125oC
V
V
V
V
μ
A
μ
A
μ
A
V
V
V
30
0.4
0.4
0.20
0.25
0.5
THERMAL RESISTANCE
T
j
, T
stg
-65 to +200
0.3
V
VALUE
MIN
15
40
40
4.5
UNIT
TEST CONDITION
SYMBOL
DESCRIPTION
625
200
VALUE
15
40
40
4.5
500
UNIT
V
V
V
V
mA
mW
oC
oC/W
CBE
IS/ISO 9002
Lic# QSC/L-000019.3
Continental Device India Limited
Data Sheet
Page 1 of 4
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